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tvrdý Optimální noviny studna geox Mám anglickou třídu neplacené maximalizovat

PDF) High speed and ultra-low dark current Ge vertical p-i-n photodetectors  on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
PDF) High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation

Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1)  matrix produced by magnetron sputtering and a post-grown annealing stage at  low temperatures | SpringerLink
Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1) matrix produced by magnetron sputtering and a post-grown annealing stage at low temperatures | SpringerLink

High speed and ultra-low dark current Ge vertical p-i-n photodetectors on  an oxygen-annealed Ge-on-insulator platform with GeOx
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx

Band offsets and trap-related electron transitions at interfaces of  (100)InAs with atomic-layer deposited Al2O3
Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3

Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1)  matrix produced by magnetron sputtering and a post-grown annealing stage at  low temperatures | SpringerLink
Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1) matrix produced by magnetron sputtering and a post-grown annealing stage at low temperatures | SpringerLink

Buty Geox J Thymar G-B Jr J944FB-00022-C6627 r.29 12365831569 - Allegro.pl
Buty Geox J Thymar G-B Jr J944FB-00022-C6627 r.29 12365831569 - Allegro.pl

PDF) High speed and ultra-low dark current Ge vertical p-i-n photodetectors  on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
PDF) High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation

High speed and ultra-low dark current Ge vertical p-i-n photodetectors on  an oxygen-annealed Ge-on-insulator platform with GeOx
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx

PDF) Formation of Ge and GeSi nanocrystals in GeOx/SiO2 multilayers
PDF) Formation of Ge and GeSi nanocrystals in GeOx/SiO2 multilayers

Enhancing Plasmonic Spectral Tunability with Anomalous Material Dispersions  Abstract
Enhancing Plasmonic Spectral Tunability with Anomalous Material Dispersions Abstract

Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1)  matrix produced by magnetron sputtering and a post-grown annealing stage at  low temperatures | SpringerLink
Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1) matrix produced by magnetron sputtering and a post-grown annealing stage at low temperatures | SpringerLink

High speed and ultra-low dark current Ge vertical p-i-n photodetectors on  an oxygen-annealed Ge-on-insulator platform with GeOx
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx

High speed and ultra-low dark current Ge vertical p-i-n photodetectors on  an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation

QUANTUM CONFINEMENT OF ABOVE-BAND-GAP TRANSITIONS IN Ge QUANTUM DOTS C. W.  Teng*, J. F. Muth*, R. M. Kolbas*, K. M. Hassan**, A.
QUANTUM CONFINEMENT OF ABOVE-BAND-GAP TRANSITIONS IN Ge QUANTUM DOTS C. W. Teng*, J. F. Muth*, R. M. Kolbas*, K. M. Hassan**, A.

High speed and ultra-low dark current Ge vertical p-i-n photodetectors on  an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation

Formation of Ge and GeSi nanocrystals in GeOx/SiO2 multilayers
Formation of Ge and GeSi nanocrystals in GeOx/SiO2 multilayers

Ge QDs in α-GeOx nano-films grown by two stage process based on  Rf-magnetron sputtering | SpringerLink
Ge QDs in α-GeOx nano-films grown by two stage process based on Rf-magnetron sputtering | SpringerLink

PDF) Formation of Ge and GeSi nanocrystals in GeOx/SiO2 multilayers
PDF) Formation of Ge and GeSi nanocrystals in GeOx/SiO2 multilayers

High speed and ultra-low dark current Ge vertical p-i-n photodetectors on  an oxygen-annealed Ge-on-insulator platform with GeOx
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx

V botách mu byl hic, tak je propíchl nožem. Teď na nich vydělává miliardy -  iDNES.cz
V botách mu byl hic, tak je propíchl nožem. Teď na nich vydělává miliardy - iDNES.cz

PDF) High speed and ultra-low dark current Ge vertical p-i-n photodetectors  on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
PDF) High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation

PDF) High speed and ultra-low dark current Ge vertical p-i-n photodetectors  on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
PDF) High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation

METAL-TEMPLATED CRYSTALLIZATION OF GERMANIUM FOR OPTOELECTRONIC  APPLICATIONS A DISSERTATION SUBMITTED TO THE DEPARTMENT OF APPL
METAL-TEMPLATED CRYSTALLIZATION OF GERMANIUM FOR OPTOELECTRONIC APPLICATIONS A DISSERTATION SUBMITTED TO THE DEPARTMENT OF APPL

Enhancing Plasmonic Spectral Tunability with Anomalous Material Dispersions  Abstract
Enhancing Plasmonic Spectral Tunability with Anomalous Material Dispersions Abstract

Formation of Ge and GeSi nanocrystals in GeOx/SiO2 multilayers
Formation of Ge and GeSi nanocrystals in GeOx/SiO2 multilayers

High speed and ultra-low dark current Ge vertical p-i-n photodetectors on  an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation

Formation of Ge and GeSi nanocrystals in GeOx/SiO2 multilayers
Formation of Ge and GeSi nanocrystals in GeOx/SiO2 multilayers