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PDF) High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
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Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1) matrix produced by magnetron sputtering and a post-grown annealing stage at low temperatures | SpringerLink
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx
Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3
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Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1) matrix produced by magnetron sputtering and a post-grown annealing stage at low temperatures | SpringerLink
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PDF) High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx
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Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1) matrix produced by magnetron sputtering and a post-grown annealing stage at low temperatures | SpringerLink
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
QUANTUM CONFINEMENT OF ABOVE-BAND-GAP TRANSITIONS IN Ge QUANTUM DOTS C. W. Teng*, J. F. Muth*, R. M. Kolbas*, K. M. Hassan**, A.
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
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Ge QDs in α-GeOx nano-films grown by two stage process based on Rf-magnetron sputtering | SpringerLink
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx
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PDF) High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
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